10 pcs : SISS23DN-T1-GE3 - MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S
    • 10 pcs : SISS23DN-T1-GE3 - MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S

    10 pcs : SISS23DN-T1-GE3 - MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S

    10electronicpartsUK78SISS23DNT1GE3
    10 pcs : SISS23DN-T1-GE3 - MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S
    £32.25
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
    Product Details
    10electronicpartsUK78SISS23DNT1GE3
    SISS23DN-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Series
    ULN2003B
    Maximum Operating Temperature
    + 105 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Operating Temperature Range
    - 40 C to + 105 C
    Product Type
    Darlington Transistors
    Package/Case
    SOIC-Narrow-16
    Product Category
    Darlington Transistors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Texas Instruments
    Factory Pack Quantity Factory Pack Quantity
    2500
    Subcategory
    Transistors
    Unit Weight
    181 mg