10 pcs : SISS05DN-T1-GE3 - MOSFET 30V P-CHANNEL (D-S)
    • 10 pcs : SISS05DN-T1-GE3 - MOSFET 30V P-CHANNEL (D-S)

    10 pcs : SISS05DN-T1-GE3 - MOSFET 30V P-CHANNEL (D-S)

    10electronicpartsUK78SISS05DNT1GE3
    10 pcs : SISS05DN-T1-GE3 - MOSFET 30V P-CHANNEL (D-S)
    £42.10
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
    Product Details
    10electronicpartsUK78SISS05DNT1GE3
    SISS05DN-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Series
    SMCJ
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Product Type
    TVS Diodes
    Termination Style
    SMD/SMT
    Package/Case
    DO-214AB-2
    Product Category
    TVS Diodes / ESD Suppressors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Bourns
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    TVS Diodes / ESD Suppression Diodes
    Unit Weight
    244 mg
    REACH - SVHC
    Details
    Pd - Power Dissipation
    5 W
    Vf - Forward Voltage
    5 V