10 pcs : SISH892BDN-T1-GE3 - MOSFET 100V N-CHANNEL (D-S)
    • 10 pcs : SISH892BDN-T1-GE3 - MOSFET 100V N-CHANNEL (D-S)

    10 pcs : SISH892BDN-T1-GE3 - MOSFET 100V N-CHANNEL (D-S)

    10electronicpartsUK78SISH892BDNT1GE3
    10 pcs : SISH892BDN-T1-GE3 - MOSFET 100V N-CHANNEL (D-S)
    £32.76
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® Gen IV MOSFETs Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.
    Product Details
    10electronicpartsUK78SISH892BDNT1GE3
    SISH892BDN-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay / Siliconix
    Width
    6.22 mm
    Height
    2.42 mm
    Length
    7.11 mm
    Series
    MURS340
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 60 C
    Mounting Style
    SMD/SMT
    Product Type
    Rectifiers
    Package/Case
    DO-214AB-2
    Product Category
    Rectifiers
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Vishay General Semiconductor
    Factory Pack Quantity Factory Pack Quantity
    850
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    210 mg
    REACH - SVHC
    Details
    Pd - Power Dissipation
    -
    Vr - Reverse Voltage
    400 V
    If - Forward Current
    4 A
    Vf - Forward Voltage
    1.28 V
    Max Surge Current
    125 A
    Ir - Reverse Current
    10 uA
    Recovery Time
    75 ns