10 pcs : SIDR140DP-T1-GE3 - MOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
    • 10 pcs : SIDR140DP-T1-GE3 - MOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC

    10 pcs : SIDR140DP-T1-GE3 - MOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC

    10electronicpartsUK78SIDR140DPT1GE3
    10 pcs : SIDR140DP-T1-GE3 - MOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
    £60.59
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® Gen IV Top-Side Double Cooling MOSFETs Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
    Product Details
    10electronicpartsUK78SIDR140DPT1GE3
    SIDR140DP-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Series
    BFP540
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 65 C
    Mounting Style
    SMD/SMT
    Product Type
    RF Bipolar Transistors
    Package/Case
    TSFP-4
    Product Category
    RF Bipolar Transistors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Infineon Technologies
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Transistors
    Unit Weight
    1.870 mg
    Qualification
    AEC-Q101
    Part # Aliases
    SP000745300 BFP54FESDH6327XT BFP540FESDH6327XTSA1
    Pd - Power Dissipation
    250 mW