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    10 pcs : SIA459EDJ-T1-GE3 - MOSFET -20V Vds 12V Vgs PowerPAK SC-70
    • 10 pcs : SIA459EDJ-T1-GE3 - MOSFET -20V Vds 12V Vgs PowerPAK SC-70

    10 pcs : SIA459EDJ-T1-GE3 - MOSFET -20V Vds 12V Vgs PowerPAK SC-70

    10electronicpartsUK78SIA459EDJT1GE3
    10 pcs : SIA459EDJ-T1-GE3 - MOSFET -20V Vds 12V Vgs PowerPAK SC-70
    £26.44
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
    Product Details
    Vishay / Siliconix
    10electronicpartsUK78SIA459EDJT1GE3
    SIA459EDJ-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay / Siliconix
    Width
    2.95 mm
    Height
    2.2 mm
    Length
    4.75 mm
    Series
    EGF1B
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 65 C
    Mounting Style
    SMD/SMT
    Product Type
    Rectifiers
    Termination Style
    SMD/SMT
    Package/Case
    DO-214AC
    Product Category
    Rectifiers
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    onsemi / Fairchild
    Factory Pack Quantity Factory Pack Quantity
    7500
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    106 mg
    REACH - SVHC
    Details
    Pd - Power Dissipation
    2 W
    Vr - Reverse Voltage
    100 V
    If - Forward Current
    1 A
    Vf - Forward Voltage
    1 V
    Max Surge Current
    30 A
    Ir - Reverse Current
    10 uA
    Recovery Time
    50 ns