10 pcs : SIA449DJ-T1-GE3 - MOSFET -30V Vds 12V Vgs PowerPAK SC-70
    • 10 pcs : SIA449DJ-T1-GE3 - MOSFET -30V Vds 12V Vgs PowerPAK SC-70

    10 pcs : SIA449DJ-T1-GE3 - MOSFET -30V Vds 12V Vgs PowerPAK SC-70

    10electronicpartsUK78SIA449DJT1GE3
    10 pcs : SIA449DJ-T1-GE3 - MOSFET -30V Vds 12V Vgs PowerPAK SC-70
    £25.32
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
    Product Details
    10electronicpartsUK78SIA449DJT1GE3
    SIA449DJ-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Width
    3.81 mm
    Height
    2.44 mm
    Length
    5.59 mm
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 65 C
    Mounting Style
    SMD/SMT
    Product Type
    Rectifiers
    Termination Style
    SMD/SMT
    Package/Case
    SMB
    Product Category
    Rectifiers
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Central Semiconductor
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    93 mg
    Pd - Power Dissipation
    -
    Vr - Reverse Voltage
    100 V
    If - Forward Current
    1 A
    Vf - Forward Voltage
    1 V
    Max Surge Current
    30 A
    Ir - Reverse Current
    5 uA
    Recovery Time
    50 ns