10 pcs : SI2333DDS-T1-BE3 - MOSFET P-CHANNEL 12-V (D-S)
    • 10 pcs : SI2333DDS-T1-BE3 - MOSFET P-CHANNEL 12-V (D-S)

    10 pcs : SI2333DDS-T1-BE3 - MOSFET P-CHANNEL 12-V (D-S)

    10electronicpartsUK78SI2333DDST1BE3
    10 pcs : SI2333DDS-T1-BE3 - MOSFET P-CHANNEL 12-V (D-S)
    £24.20
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
    Product Details
    10electronicpartsUK78SI2333DDST1BE3
    SI2333DDS-T1-BE3
    10 Items

    Data sheet

    Manufacturer
    Vishay / Siliconix
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    Schottky Diodes & Rectifiers
    Package/Case
    TO-252-3
    Product Category
    Schottky Diodes & Rectifiers
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    ROHM Semiconductor
    Factory Pack Quantity Factory Pack Quantity
    2500
    Subcategory
    Diodes & Rectifiers
    Qualification
    AEC-Q101
    Part # Aliases
    RBR10BM60AFH
    Vr - Reverse Voltage
    60 V
    If - Forward Current
    10 A
    Vf - Forward Voltage
    650 mV
    Ir - Reverse Current
    200 uA