10 pcs : SI2329DS-T1-GE3 - MOSFET -8V Vds 5V Vgs SOT-23
    • 10 pcs : SI2329DS-T1-GE3 - MOSFET -8V Vds 5V Vgs SOT-23

    10 pcs : SI2329DS-T1-GE3 - MOSFET -8V Vds 5V Vgs SOT-23

    10electronicpartsUK78SI2329DST1GE3
    10 pcs : SI2329DS-T1-GE3 - MOSFET -8V Vds 5V Vgs SOT-23
    £28.96
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    SI2 Series TrenchFET® Power MOSFETs Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
    Product Details
    10electronicpartsUK78SI2329DST1GE3
    SI2329DS-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Series
    SMCJ
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Product Type
    TVS Diodes
    Termination Style
    SMD/SMT
    Package/Case
    SMC-2
    Product Category
    TVS Diodes / ESD Suppressors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Diodes Incorporated
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    TVS Diodes / ESD Suppression Diodes
    Unit Weight
    210 mg
    REACH - SVHC
    Details
    Pd - Power Dissipation
    5 W
    Vf - Forward Voltage
    3.5 V