10 pcs : SIA427DJ-T1-GE3 - MOSFET 8V 12A 19W 13mohms @ 4.5V
    • 10 pcs : SIA427DJ-T1-GE3 - MOSFET 8V 12A 19W 13mohms @ 4.5V

    10 pcs : SIA427DJ-T1-GE3 - MOSFET 8V 12A 19W 13mohms @ 4.5V

    10electronicpartsUK781SIA427DJT1GE3
    10 pcs : SIA427DJ-T1-GE3 - MOSFET 8V 12A 19W 13mohms @ 4.5V
    £28.40
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    SiA427DJ 8V TrenchFET® Power MOSFETs Vishay Semiconductors SiA427DJ 8V TrenchFET® Power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages.
    Product Details
    10electronicpartsUK781SIA427DJT1GE3
    SIA427DJ-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Width
    2.5 mm
    Height
    1.5 mm
    Length
    4.5 mm
    Series
    FCX69
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    BJTs - Bipolar Transistors
    Package/Case
    SOT-89-3
    Product Category
    Bipolar Transistors - BJT
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Diodes Incorporated
    Factory Pack Quantity Factory Pack Quantity
    1000
    Subcategory
    Transistors
    Unit Weight
    52 mg
    Pd - Power Dissipation
    2 W