10 pcs : SIA414DJ-T1-GE3 - MOSFET 8.0V 12A 19W 11mohm @ 4.5V
    • 10 pcs : SIA414DJ-T1-GE3 - MOSFET 8.0V 12A 19W 11mohm @ 4.5V

    10 pcs : SIA414DJ-T1-GE3 - MOSFET 8.0V 12A 19W 11mohm @ 4.5V

    10electronicpartsUK781SIA414DJT1GE3
    10 pcs : SIA414DJ-T1-GE3 - MOSFET 8.0V 12A 19W 11mohm @ 4.5V
    £30.71
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    PowerPAK SC-70 MOSFETs Vishay Semiconductors PowerPAK® SC-70 MOSFET combines the tiny footprint of the SC-70 package with on-resistance comparable to the larger TSOP-6, resulting in very low power consumption in a package 50% smaller than the TSOP-6 and 27% thinner. The Vishay Semiconductor PowerPAK SC-70 MOSFET comes in a variety of configurations and voltage ratings for different applications, including single, single plus Schottky, and dual devices, in both n-channel and p-channel, in addition to n- and p-channel complementary pairs. The PowerPAK SC-70 MOSFET features voltage ranges between 8V and 30V with extremely low on-resistance values down to 0.011Ω at 4.5V.
    Product Details
    10electronicpartsUK781SIA414DJT1GE3
    SIA414DJ-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Series
    ZXTP722
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    BJTs - Bipolar Transistors
    Package/Case
    DFN2020B-3
    Product Category
    Bipolar Transistors - BJT
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Diodes Incorporated
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Transistors
    Unit Weight
    30 g
    Pd - Power Dissipation
    1.5 W