10 pcs : SI7923DN-T1-E3 - MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
    • 10 pcs : SI7923DN-T1-E3 - MOSFET -30V Vds 20V Vgs PowerPAK 1212-8

    10 pcs : SI7923DN-T1-E3 - MOSFET -30V Vds 20V Vgs PowerPAK 1212-8

    10electronicpartsUK781SI7923DNT1E3
    10 pcs : SI7923DN-T1-E3 - MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
    £42.10
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Si79 MOSFETs Vishay Si79 MOSFETs feature advanced ThunderFET® technology to balance parameters like RDS(on), Qg, Qsw, and Qoss. These Vishay MOSFETs are rigorously tested, ensuring 100% reliability through extensive Rg and UIS testing. The devices' design is PWM optimized, facilitating fast switching performance. Encased in a Low Thermal Resistance PowerPAK® package, the Si79 MOSFETS demonstrate efficient heat dissipation. Additionally, these MOSFETs feature a high threshold voltage at high temperatures, enhancing stability. Including a dual MOSFET configuration contributes to space savings, making the Si79 an ideal choice for applications where size is critical.
    Product Details
    10electronicpartsUK781SI7923DNT1E3
    SI7923DN-T1-E3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Width
    3.95 mm
    Height
    2.45 mm
    Length
    4.75 mm
    Series
    ES2B
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    Rectifiers
    Termination Style
    SMD/SMT
    Package/Case
    DO-214AA
    Product Category
    Rectifiers
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    onsemi / Fairchild
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    180 mg
    Part # Aliases
    ES2B_NL
    REACH - SVHC
    Details
    Pd - Power Dissipation
    1.66 W
    Vr - Reverse Voltage
    100 V
    If - Forward Current
    2 A
    Vf - Forward Voltage
    900 mV
    Max Surge Current
    50 A
    Ir - Reverse Current
    10 uA
    Recovery Time
    20 ns