10 pcs : SI4922BDY-T1-GE3 - MOSFET 30V 8.0A 3.1W 16mohm @ 10V
    • 10 pcs : SI4922BDY-T1-GE3 - MOSFET 30V 8.0A 3.1W 16mohm @ 10V

    10 pcs : SI4922BDY-T1-GE3 - MOSFET 30V 8.0A 3.1W 16mohm @ 10V

    10electronicpartsUK781SI4922BDYGE3
    10 pcs : SI4922BDY-T1-GE3 - MOSFET 30V 8.0A 3.1W 16mohm @ 10V
    £41.06
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Si4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.
    Product Details
    10electronicpartsUK781SI4922BDYGE3
    SI4922BDY-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Width
    6.22 mm
    Height
    2.42 mm
    Length
    7.11 mm
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    Rectifiers
    Termination Style
    SMD/SMT
    Package/Case
    DO-214AB-2
    Product Category
    Rectifiers
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Vishay General Semiconductor
    Factory Pack Quantity Factory Pack Quantity
    850
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    300 mg
    Part # Aliases
    S3M-E3/9AT
    REACH - SVHC
    Details
    Pd - Power Dissipation
    -
    Vr - Reverse Voltage
    1 kV
    If - Forward Current
    3 A
    Vf - Forward Voltage
    1.15 V
    Max Surge Current
    100 A
    Ir - Reverse Current
    10 uA
    Recovery Time
    2.5 us