10 pcs : SI4900DY-T1-GE3 - MOSFET 60V 5.3A 3.1W 58mohm @ 10V
    • 10 pcs : SI4900DY-T1-GE3 - MOSFET 60V 5.3A 3.1W 58mohm @ 10V

    10 pcs : SI4900DY-T1-GE3 - MOSFET 60V 5.3A 3.1W 58mohm @ 10V

    10electronicpartsUK781SI4900DYGE3
    10 pcs : SI4900DY-T1-GE3 - MOSFET 60V 5.3A 3.1W 58mohm @ 10V
    £41.82
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Si4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.
    Product Details
    10electronicpartsUK781SI4900DYGE3
    SI4900DY-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay / Siliconix
    Series
    SI2
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Package/Case
    SOT-23-3
    Product Category
    MOSFET
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Vishay Semiconductors
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    MOSFETs
    Tradename
    TrenchFET
    Unit Weight
    8 mg
    Part # Aliases
    SI2315BDS-T1-BE3 SI2315BDS-E3
    Pd - Power Dissipation
    750 mW
    Typical Turn-Off Delay Time
    50 ns