10 pcs : SI4497DY-T1-GE3 - MOSFET -30V Vds 20V Vgs SO-8
    • 10 pcs : SI4497DY-T1-GE3 - MOSFET -30V Vds 20V Vgs SO-8

    10 pcs : SI4497DY-T1-GE3 - MOSFET -30V Vds 20V Vgs SO-8

    10electronicpartsUK781SI4497DYT1GE3
    10 pcs : SI4497DY-T1-GE3 - MOSFET -30V Vds 20V Vgs SO-8
    £46.64
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
    Product Details
    10electronicpartsUK781SI4497DYT1GE3
    SI4497DY-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Series
    MMBF4117
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Operating Temperature Range
    - 55 C to + 150 C
    Product Type
    JFETs
    Package/Case
    SOT-23-3
    Product Category
    JFET
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    onsemi / Fairchild
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Transistors
    Unit Weight
    8 mg
    Part # Aliases
    MMBF4117_NL
    Pd - Power Dissipation
    225 mW