10 pcs : SI4477DY-T1-GE3 - MOSFET -20V Vds 12V Vgs SO-8
    • 10 pcs : SI4477DY-T1-GE3 - MOSFET -20V Vds 12V Vgs SO-8

    10 pcs : SI4477DY-T1-GE3 - MOSFET -20V Vds 12V Vgs SO-8

    10electronicpartsUK781SI4477DYGE3
    10 pcs : SI4477DY-T1-GE3 - MOSFET -20V Vds 12V Vgs SO-8
    £36.72
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Si4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.
    Product Details
    10electronicpartsUK781SI4477DYGE3
    SI4477DY-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Width
    4.2 mm
    Height
    2.7 mm
    Length
    4.95 mm
    Series
    MB10S
    Maximum Operating Temperature
    + 150 C
    Mounting Style
    SMD/SMT
    Product Type
    Bridge Rectifiers
    Termination Style
    Solder Pad
    Package/Case
    SOIC-4
    Product Category
    Bridge Rectifiers
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    onsemi / Fairchild
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    228 mg
    REACH - SVHC
    Details
    Pd - Power Dissipation
    1.4 W
    Vr - Reverse Voltage
    1 kV
    If - Forward Current
    500 mA
    Vf - Forward Voltage
    1 V
    Max Surge Current
    35 A
    Ir - Reverse Current
    5 uA