10 pcs : SI4456DY-T1-E3 - MOSFET 40V 33A 7.8W 3.8mohm @ 10V
    • 10 pcs : SI4456DY-T1-E3 - MOSFET 40V 33A 7.8W 3.8mohm @ 10V

    10 pcs : SI4456DY-T1-E3 - MOSFET 40V 33A 7.8W 3.8mohm @ 10V

    10electronicpartsUK781SI4456DYT1E3
    10 pcs : SI4456DY-T1-E3 - MOSFET 40V 33A 7.8W 3.8mohm @ 10V
    £53.00
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Si4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.
    Product Details
    10electronicpartsUK781SI4456DYT1E3
    SI4456DY-T1-E3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    -
    Mounting Style
    SMD/SMT
    Product Type
    BJTs - Bipolar Transistors
    Product Category
    Bipolar Transistors - BJT
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Toshiba
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Transistors
    Unit Weight
    6.600 mg
    Qualification
    AEC-Q101
    Pd - Power Dissipation
    800 mW