10 pcs : SI4425BDY-T1-GE3 - MOSFET 30V 11.4A 2.5W 12mohm @ 10V
    • 10 pcs : SI4425BDY-T1-GE3 - MOSFET 30V 11.4A 2.5W 12mohm @ 10V

    10 pcs : SI4425BDY-T1-GE3 - MOSFET 30V 11.4A 2.5W 12mohm @ 10V

    10electronicpartsUK781SI4425BDYGE3
    10 pcs : SI4425BDY-T1-GE3 - MOSFET 30V 11.4A 2.5W 12mohm @ 10V
    £37.34
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Si4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.
    Product Details
    10electronicpartsUK781SI4425BDYGE3
    SI4425BDY-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay / Siliconix
    Series
    SMBJ-Q
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Product Type
    TVS Diodes
    Termination Style
    SMD/SMT
    Package/Case
    DO-214AA-2
    Product Category
    TVS Diodes / ESD Suppressors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Bourns
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    TVS Diodes / ESD Suppression Diodes
    Unit Weight
    93 mg
    Qualification
    AEC-Q101
    REACH - SVHC
    Details
    Pd - Power Dissipation
    -
    Vf - Forward Voltage
    -