10 pcs : SI4166DY-T1-GE3 - MOSFET 30V Vds 20V Vgs SO-8
    • 10 pcs : SI4166DY-T1-GE3 - MOSFET 30V Vds 20V Vgs SO-8

    10 pcs : SI4166DY-T1-GE3 - MOSFET 30V Vds 20V Vgs SO-8

    10electronicpartsUK781SI4166DYT1GE3
    10 pcs : SI4166DY-T1-GE3 - MOSFET 30V Vds 20V Vgs SO-8
    £38.81
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® Gen III Power MOSFETs Vishay Semiconductor TrenchFET® Gen III Power MOSFETs offer low on-resistance and on-resistance times gate charge in PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The lower on-resistance and gate charge of TrenchFET Gen III Power MOSFETs translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology. Vishay Semiconductor TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
    Product Details
    10electronicpartsUK781SI4166DYT1GE3
    SI4166DY-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Series
    TPSMB
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 65 C
    Product Type
    TVS Diodes
    Termination Style
    SMD/SMT
    Package/Case
    DO-214AA-2
    Product Category
    TVS Diodes / ESD Suppressors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Littelfuse
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    TVS Diodes / ESD Suppression Diodes
    Unit Weight
    96 mg
    Qualification
    AEC-Q101
    REACH - SVHC
    Details
    Pd - Power Dissipation
    5 W