10 pcs : SI3469DV-T1-GE3 - MOSFET 20V 6.7A 2.0W 30mohm @ 10V
    • 10 pcs : SI3469DV-T1-GE3 - MOSFET 20V 6.7A 2.0W 30mohm @ 10V

    10 pcs : SI3469DV-T1-GE3 - MOSFET 20V 6.7A 2.0W 30mohm @ 10V

    10electronicpartsUK781SI3469DVGE3
    10 pcs : SI3469DV-T1-GE3 - MOSFET 20V 6.7A 2.0W 30mohm @ 10V
    £37.37
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Si3 TrenchFET® Power MOSFETs Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different VGS and VDS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low RDS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
    Product Details
    10electronicpartsUK781SI3469DVGE3
    SI3469DV-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay / Siliconix
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Product Type
    TVS Diodes
    Package/Case
    DO-214AC-2
    Product Category
    TVS Diodes / ESD Suppressors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Rectron
    Factory Pack Quantity Factory Pack Quantity
    7500
    Subcategory
    TVS Diodes / ESD Suppression Diodes
    Unit Weight
    64 mg
    Part # Aliases
    SMAJ6.0A
    Pd - Power Dissipation
    1 W
    Vf - Forward Voltage
    3.5 V