10 pcs : SI2306BDS-T1-GE3 - MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
    • 10 pcs : SI2306BDS-T1-GE3 - MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V

    10 pcs : SI2306BDS-T1-GE3 - MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V

    10electronicpartsUK781SI2306BDST1GE3
    10 pcs : SI2306BDS-T1-GE3 - MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
    £28.96
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    SI2 Series TrenchFET® Power MOSFETs Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
    Product Details
    10electronicpartsUK781SI2306BDST1GE3
    SI2306BDS-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay / Siliconix
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Product Type
    Schottky Diodes & Rectifiers
    Package/Case
    DO-214AC-2
    Product Category
    Schottky Diodes & Rectifiers
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Vishay Semiconductors
    Factory Pack Quantity Factory Pack Quantity
    7500
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    106 mg
    Vr - Reverse Voltage
    40 V
    If - Forward Current
    3 A
    Vf - Forward Voltage
    460 mV
    Ir - Reverse Current
    20 mA