10 pcs : CSD23280F3T - MOSFET -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3
    • 10 pcs : CSD23280F3T - MOSFET -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3

    10 pcs : CSD23280F3T - MOSFET -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3

    10electronicpartsUK595CSD23280F3T
    10 pcs : CSD23280F3T - MOSFET -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
    £34.04
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    FemtoFET Power MOSFETs Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.
    Product Details
    10electronicpartsUK595CSD23280F3T
    CSD23280F3T
    10 Items

    Data sheet

    Manufacturer
    TEXAS INSTRUMENTS
    Series
    BZX384
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    Zener Diodes
    Package/Case
    SOD-323-2
    Product Category
    Zener Diodes
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Vishay Semiconductors
    Factory Pack Quantity Factory Pack Quantity
    15000
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    10 mg
    Qualification
    AEC-Q101
    Pd - Power Dissipation
    200 mW
    Ir - Reverse Current
    1 uA