10 pcs : CSD17382F4 - MOSFET 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection 3-PICOS
    • 10 pcs : CSD17382F4 - MOSFET 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection 3-PICOS

    10 pcs : CSD17382F4 - MOSFET 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection 3-PICOS

    10electronicpartsUK595CSD17382F4
    10 pcs : CSD17382F4 - MOSFET 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
    £25.04
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    FemtoFET Power MOSFETs Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.
    Product Details
    10electronicpartsUK595CSD17382F4
    CSD17382F4
    10 Items

    Data sheet

    Manufacturer
    TEXAS INSTRUMENTS
    Series
    DTC015TM
    Maximum Operating Temperature
    + 150 C
    Mounting Style
    SMD/SMT
    Product Type
    Digital Transistors
    Package/Case
    VMT-3
    Product Category
    Digital Transistors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    ROHM Semiconductor
    Factory Pack Quantity Factory Pack Quantity
    8000
    Subcategory
    Transistors
    Part # Aliases
    DTC015TM
    Pd - Power Dissipation
    150 mW