NVBG160N120SC1 160mΩ SiC MOSFET onsemi NVBG160N120SC1 160mΩ SiC MOSFET provides superior switching performance and higher reliability compared to Silicon. This MOSFET features 1200V drain-to-source voltage (VDSS) and 19.5A maximum drain current (ID). The NVBG160N120SC1 MOSFET offers low ON resistance and a compact chip size that ensures low capacitance and gate charge. This MOSFET provides high efficiency, faster operation frequency, increased power density, reduced Electro-Magnetic Interference (EMI), and reduced system size. The NVBG160N120SC1 MOSFET is qualified for automotive applications like automotive onboard chargers and automotive DC/DC converters for EV/HEV according to the AEC-Q101 standards.