1 pcs : TK4P60D,RQ - MOSFET Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ2000 V600 PD80W F1MHZ
    • 1 pcs : TK4P60D,RQ - MOSFET Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ2000 V600 PD80W F1MHZ

    1 pcs : TK4P60D,RQ - MOSFET Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ2000 V600 PD80W F1MHZ

    electronicparts-UK/M/757-TK4P60DRQ
    TOSHIBA
    £10.78
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    π-MOS VII MOSFETs Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.
    Product Details
    TOSHIBA
    electronicparts-UK/M/757-TK4P60DRQ
    TK4P60D,RQ
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Series
    TK4P60D
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Package/Case
    DPAK-3 (TO-252-3)
    Product Category
    MOSFET
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Toshiba
    Factory Pack Quantity Factory Pack Quantity
    2000
    Subcategory
    MOSFETs
    Tradename
    MOSVII
    Pd - Power Dissipation
    100 W
    Typical Turn-Off Delay Time
    55 ns