1 pcs : SI4800BDY-T1-GE3 - MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
    • 1 pcs : SI4800BDY-T1-GE3 - MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V

    1 pcs : SI4800BDY-T1-GE3 - MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V

    electronicparts-UK/M/781-SI4800BDY-T1-GE3
    £10.66
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Si4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.
    Product Details
    electronicparts-UK/M/781-SI4800BDY-T1-GE3
    SI4800BDY-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay / Siliconix
    Height
    1.75 mm
    Series
    SI4
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Package/Case
    SOIC-8
    Product Category
    MOSFET
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Vishay / Siliconix
    Factory Pack Quantity Factory Pack Quantity
    2500
    Subcategory
    MOSFETs
    Tradename
    TrenchFET
    Unit Weight
    187 mg
    Part # Aliases
    SI4800BDY-GE3
    REACH - SVHC
    Details
    Pd - Power Dissipation
    2.5 W