1 pcs : TPN4R712MD,L1Q - MOSFET P-Channel Mosfet 20V UMOS-VI
    • 1 pcs : TPN4R712MD,L1Q - MOSFET P-Channel Mosfet 20V UMOS-VI

    1 pcs : TPN4R712MD,L1Q - MOSFET P-Channel Mosfet 20V UMOS-VI

    electronicparts-UK/M/757-TPN4R712MDL1Q
    TOSHIBA
    £10.59
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    U-MOSVI Small Signal MOSFETs Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.
    Product Details
    TOSHIBA
    electronicparts-UK/M/757-TPN4R712MDL1Q
    TPN4R712MD,L1Q
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Width
    3.1 mm
    Height
    0.85 mm
    Length
    3.1 mm
    Series
    TPN4R712MD
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Package/Case
    TSON-8
    Product Category
    MOSFET
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Toshiba
    Factory Pack Quantity Factory Pack Quantity
    5000
    Subcategory
    MOSFETs
    Tradename
    U-MOSVI
    Pd - Power Dissipation
    42 W
    Typical Turn-Off Delay Time
    443 ns