LSIC1MO170T0750 N-Channel SiC MOSFET IXYS LSIC1MO170T0750 N-Channel SiC MOSFET is a 1700V Silicon Carbide (SiC) MOSFET optimized for high-frequency, high-efficiency applications. This MOSFET features an extremely low 11nC gate charge, low 11.5pF output capacitance, and a low 29Ω gate resistance for high-frequency switching. The LSIC1MO170T0750 MOSFET also has an ultra-low drain-source on-state resistance of 750mΩ (typical, at ID = 2A, VGS = 20V). The low gate charge and on-resistance of this device translates into lower conduction and switching losses, respectively.