1 pcs : SIHB22N60EF-GE3 - MOSFET Nch 600V Vds 30V Vgs TO-263, w/diode
    • 1 pcs : SIHB22N60EF-GE3 - MOSFET Nch 600V Vds 30V Vgs TO-263, w/diode

    1 pcs : SIHB22N60EF-GE3 - MOSFET Nch 600V Vds 30V Vgs TO-263, w/diode

    Allparts-UK/M/78-SIHB22N60EF-GE3
    £12.09
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    EF High Voltage Power MOSFETs Vishay / Siliconix EF High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
    Product Details
    Allparts-UK/M/78-SIHB22N60EF-GE3
    SIHB22N60EF-GE3
    10 Items

    Data sheet

    Manufacturer
    VISHAY
    Series
    EF
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Configuration
    Single
    Package/Case
    D2PAK-3 (TO-263-3)
    Product Category
    MOSFET
    Packaging
    Tube
    RoHS
    Details
    Brand
    Vishay / Siliconix
    Factory Pack Quantity Factory Pack Quantity
    1000
    Subcategory
    MOSFETs
    Unit Weight
    4 g
    REACH - SVHC
    Details
    Pd - Power Dissipation
    179 W
    Typical Turn-Off Delay Time
    58 ns