1 pcs : SIDR392DP-T1-GE3 - MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
    • 1 pcs : SIDR392DP-T1-GE3 - MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC

    1 pcs : SIDR392DP-T1-GE3 - MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC

    electronicparts-UK/M/78-SIDR392DP-T1-GE3
    £10.29
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® Gen IV Top-Side Double Cooling MOSFETs Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
    Product Details
    electronicparts-UK/M/78-SIDR392DP-T1-GE3
    SIDR392DP-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    VISHAY
    Series
    SID
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Configuration
    Single
    Package/Case
    SOIC-8
    Product Category
    MOSFET
    Packaging
    Cut Tape
    RoHS
    Details
    Brand
    Vishay Semiconductors
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    MOSFETs
    Tradename
    TrenchFET
    Unit Weight
    750 mg
    REACH - SVHC
    Details
    Pd - Power Dissipation
    125 W
    Typical Turn-Off Delay Time
    41 ns