1 pcs : SIHG080N60E-GE3 - MOSFET N-CHANNEL 600V
    • 1 pcs : SIHG080N60E-GE3 - MOSFET N-CHANNEL 600V

    1 pcs : SIHG080N60E-GE3 - MOSFET N-CHANNEL 600V

    Allparts-UK/M/78-SIHG080N60E-GE3
    £12.94
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    SiHG080N60E E Series Power MOSFETs Vishay / Siliconix SiHG080N60E E Series Power MOSFETs feature reduced switching and conduction losses utilizing 4th generation E series technology. The SiHG080N60E Power MOSFETs have a 650V drain-source voltage 63nC total gate charge in a TO-247AC package. The SiHG080N60E MOSFETs offer a low figure-of-merit (FOM) Ron x Qg and a low effective capacitance (Co(er)).
    Product Details
    Allparts-UK/M/78-SIHG080N60E-GE3
    SIHG080N60E-GE3
    10 Items

    Data sheet

    Manufacturer
    VISHAY
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    MOSFET
    Configuration
    Single
    Package/Case
    TO-247AC-3
    Product Category
    MOSFET
    Packaging
    Tube
    RoHS
    Details
    Brand
    Vishay / Siliconix
    Factory Pack Quantity Factory Pack Quantity
    25
    Subcategory
    MOSFETs
    Unit Weight
    6 g
    REACH - SVHC
    Details
    Pd - Power Dissipation
    227 W
    Typical Turn-Off Delay Time
    37 ns