1 pcs : SIHU3N50DA-GE3 - MOSFET 500V Vds 30V Vgs IPAK (TO-251)
    • 1 pcs : SIHU3N50DA-GE3 - MOSFET 500V Vds 30V Vgs IPAK (TO-251)

    1 pcs : SIHU3N50DA-GE3 - MOSFET 500V Vds 30V Vgs IPAK (TO-251)

    Allparts-UK/M/78-SIHU3N50DA-GE3
    £8.81
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    D Series High Voltage Power MOSFETs Vishay / Siliconix D Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V, and 600V ratings. These new devices combine low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65ΩnC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
    Product Details
    Allparts-UK/M/78-SIHU3N50DA-GE3
    SIHU3N50DA-GE3
    10 Items

    Data sheet

    Manufacturer
    VISHAY
    Series
    D
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    MOSFET
    Configuration
    Single
    Package/Case
    TO-251-3
    Product Category
    MOSFET
    Packaging
    Tube
    RoHS
    Details
    Brand
    Vishay / Siliconix
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    MOSFETs
    Unit Weight
    340 mg
    REACH - SVHC
    Details
    Pd - Power Dissipation
    69 W
    Typical Turn-Off Delay Time
    11 ns