1 pcs : TP65H050G4YS - MOSFET GaN FET 650 V 35A TO-247-4

TP65H050G4YS 650V SuperGaN® FET Transphorm TP65H050G4YS 650V SuperGaN® FET is a 50mΩ Gallium Nitride (GaN) normally-off device available in 4 Lead TO-247 package. This Gen IV SuperGaN FET uses Gen IV platform, which supports advanced epi and patented design technologies to simplify manufacturability. The TP65H050G4YS 650V FET combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET for superior reliability and performance. This SuperGaN FET improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Typical applications include datacom broad industrial, PV inverter, and servo motor.