1 pcs : TP65H150BG4JSG - MOSFET GAN FET 650V 13A QFN5x6

TP65H150BG4JSG 650V SuperGaN® GaN FET Transphorm TP65H150BG4JSG 650V SuperGaN® Gallium Nitride (GaN) FET is a 650V, 150mΩ normally-off device offering superior quality and performance. TP65H150BG4JSG combines state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies in a 5mm x 6mm PQFN package. Operating within a -55°C to +150°C temperature range, this component features 83W maximum power dissipation, an 10A to 16A maximum continuous drain current range, and a 55A pulsed drain current (maximum). The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.