1 pcs : TP65H150G4PS - MOSFET GAN FET 650V 13A TO220

Gen IV SuperGaN® FETs Transphorm Gen IV SuperGaN® FETs are normally-off devices that enable the AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN® platform comes with advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. These Gen IV FETs are available in two variants like TP65H035G4WS which comes in a 3-lead TO-247 package and TP65H300G4LSG which comes in an 8x8 PQFN package.