1 pcs : TP65H035G4WSQA - MOSFET GAN FET 650V 46.5A TO247
    • 1 pcs : TP65H035G4WSQA - MOSFET GAN FET 650V 46.5A TO247

    1 pcs : TP65H035G4WSQA - MOSFET GAN FET 650V 46.5A TO247

    electronicparts-UK/M/227-TP65H035G4WSQA
    Transphorm
    £46.90
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Automotive (AEC-Q101) Qualified GaN FETs Transphorm Automotive (AEC-Q101) Qualified GaN FETs are normally-off devices that offer superior reliability and performance. The devices combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The series offers improved efficiency over silicon through lower gate charge and crossover loss, and smaller reverse recovery charge. Transphorm Automotive (AEC-Q101) Qualified GaN FETs are ideal for automotive, datacom, PV inverters, and industrial applications.
    Product Details
    Transphorm
    electronicparts-UK/M/227-TP65H035G4WSQA
    TP65H035G4WSQA
    10 Items

    Data sheet

    Manufacturer
    Transphorm
    Series
    Gen IV
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    MOSFET
    Package/Case
    TO-247-3
    Product Category
    MOSFET
    Packaging
    Tube
    RoHS
    Details
    Brand
    Transphorm
    Factory Pack Quantity Factory Pack Quantity
    30
    Subcategory
    MOSFETs
    Pd - Power Dissipation
    187 W
    Typical Turn-Off Delay Time
    94 ns