TP65H070L 650V GaN FETs Transphorm TP65H070L 650V GaN FETs are 72mΩ Gallium Nitride (GaN) FETs that are normally off devices. The 8mm x 8mm PQFN device combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies, resulting in superior reliability and performance. The Transphorm GaN FET offers improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.