1 pcs : TP65H070LSG-TR - MOSFET GAN FET 650V 25A PQFN88
    • 1 pcs : TP65H070LSG-TR - MOSFET GAN FET 650V 25A PQFN88

    1 pcs : TP65H070LSG-TR - MOSFET GAN FET 650V 25A PQFN88

    electronicparts-UK/M/227-TP65H070LSG-TR
    Transphorm
    £30.31
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TP65H070L 650V GaN FETs Transphorm TP65H070L 650V GaN FETs are 72mΩ Gallium Nitride (GaN) FETs that are normally off devices. The 8mm x 8mm PQFN device combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies, resulting in superior reliability and performance. The Transphorm GaN FET offers improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
    Product Details
    Transphorm
    electronicparts-UK/M/227-TP65H070LSG-TR
    TP65H070LSG-TR
    10 Items

    Data sheet

    Manufacturer
    Transphorm
    Series
    Gen III
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Package/Case
    PQFN-8
    Product Category
    MOSFET
    Packaging
    Cut Tape
    RoHS
    Details
    Brand
    Transphorm
    Moisture Sensitive
    Yes
    Factory Pack Quantity Factory Pack Quantity
    500
    Subcategory
    MOSFETs
    Pd - Power Dissipation
    96 W