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    1 pcs : TP65H035G4WS - MOSFET 650V, 35mOhm
    • 1 pcs : TP65H035G4WS - MOSFET 650V, 35mOhm

    1 pcs : TP65H035G4WS - MOSFET 650V, 35mOhm

    electronicparts-UK/M/227-TP65H035G4WS
    Transphorm
    £43.45
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    650V GaN FETs in TO-247 Packages Transphorm 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The devices offer superior reliability and performance with improved efficiency over silicon. Transphorm FETs have a lower gate charge, lower crossover loss, and a smaller reverse recovery charge.
    Product Details
    Transphorm
    electronicparts-UK/M/227-TP65H035G4WS
    TP65H035G4WS
    10 Items

    Data sheet

    Manufacturer
    Transphorm
    Series
    TP65H
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    MOSFET
    Package/Case
    TO-247-3
    Product Category
    MOSFET
    Packaging
    Tube
    RoHS
    Details
    Brand
    Transphorm
    Factory Pack Quantity Factory Pack Quantity
    30
    Subcategory
    MOSFETs
    Tradename
    SuperGaN
    Unit Weight
    6 g
    Pd - Power Dissipation
    156 W
    Typical Turn-Off Delay Time
    94 ns