1 pcs : TK4A80E,S4X - MOSFET Pb-FPOWERMOSFETTRANSISTORTO-220SISPD35WF1MHZ
    • 1 pcs : TK4A80E,S4X - MOSFET Pb-FPOWERMOSFETTRANSISTORTO-220SISPD35WF1MHZ

    1 pcs : TK4A80E,S4X - MOSFET Pb-FPOWERMOSFETTRANSISTORTO-220SISPD35WF1MHZ

    electronicparts-UK/M/757-TK4A80ES4X
    TOSHIBA
    £9.78
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    π-MOS VIII MOSFETs Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.
    Product Details
    TOSHIBA
    electronicparts-UK/M/757-TK4A80ES4X
    TK4A80E,S4X
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Series
    TK4A80E
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    MOSFET
    Configuration
    Single
    Package/Case
    TO-220-3
    Product Category
    MOSFET
    Packaging
    Tube
    RoHS
    Details
    Brand
    Toshiba
    Factory Pack Quantity Factory Pack Quantity
    50
    Subcategory
    MOSFETs
    Tradename
    MOSVIII
    Unit Weight
    2 g
    Pd - Power Dissipation
    35 W
    Typical Turn-Off Delay Time
    75 ns