1 pcs : IPTG111N20NM3FDATMA1 - MOSFET TRENCH &gt,100V
    • 1 pcs : IPTG111N20NM3FDATMA1 - MOSFET TRENCH &gt,100V

    1 pcs : IPTG111N20NM3FDATMA1 - MOSFET TRENCH &gt,100V

    electronicparts-UK/M/726-IPTG111N20NM3FDA
    £20.48
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    OptiMOS™ 3 N-channel MOSFETs Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.
    Product Details
    electronicparts-UK/M/726-IPTG111N20NM3FDA
    IPTG111N20NM3FDATMA1
    10 Items

    Data sheet

    Manufacturer
    Infineon
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Package/Case
    HSOG-8
    Product Category
    MOSFET
    Packaging
    Cut Tape
    Brand
    Infineon Technologies
    Factory Pack Quantity Factory Pack Quantity
    1800
    Subcategory
    MOSFETs
    Part # Aliases
    IPTG111N20NM3FD SP005431194
    Pd - Power Dissipation
    375 W