1 pcs : TW107N65C,S1F - MOSFET G3 650V SiC-MOSFET TO-247 107mohm

3rd Generation Silicon Carbide MOSFETs Toshiba 3rd Generation Silicon Carbide MOSFETs are designed for high-power industrial applications like 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs contribute to reducing power consumption and improving power density. This is due to SiC technology which allows devices to deliver higher voltages, faster switching, and lower On-resistance. Toshiba’s third generation chip design offers enhanced reliability in addition to input capacitance (CISS) of 4850pF (typical), a low gate-input charge (Qg) of 128nC (typical), and a drain-to-source On-resistance (RDS(ON)) of just 15mΩ or 30mΩ (typical).