1 pcs : UF3C065080B7S - MOSFET 650V/80mO,SICFET,G3,TO263-7
    • 1 pcs : UF3C065080B7S - MOSFET 650V/80mO,SICFET,G3,TO263-7

    1 pcs : UF3C065080B7S - MOSFET 650V/80mO,SICFET,G3,TO263-7

    Allparts-UK/M/431-UF3C065080B7S
    Qorvo
    £22.43
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    UF3C SiC FETs UnitedSiC / Qorvo UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The UnitedSiC / Qorvo UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.
    Product Details
    Qorvo
    Allparts-UK/M/431-UF3C065080B7S
    UF3C065080B7S
    10 Items

    Data sheet

    Manufacturer
    Qorvo
    Series
    UF3C
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Configuration
    Single
    Package/Case
    D2PAK-7
    Product Category
    MOSFET
    Packaging
    Cut Tape
    RoHS
    Details
    Brand
    Qorvo
    Moisture Sensitive
    Yes
    Factory Pack Quantity Factory Pack Quantity
    800
    Subcategory
    MOSFETs
    Tradename
    SiC FET
    Pd - Power Dissipation
    136.4 W
    Typical Turn-Off Delay Time
    25 ns, 26 ns