1 pcs : SiR5112DP-T1-RE3 - MOSFET N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V
    • 1 pcs : SiR5112DP-T1-RE3 - MOSFET N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V

    1 pcs : SiR5112DP-T1-RE3 - MOSFET N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V

    Allparts-UK/M/78-SIR5112DP-T1-RE3
    £9.97
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
    Product Details
    Allparts-UK/M/78-SIR5112DP-T1-RE3
    SiR5112DP-T1-RE3
    10 Items

    Data sheet

    Manufacturer
    VISHAY
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Package/Case
    PowerPAK SO-8
    Product Category
    MOSFET
    RoHS
    Details
    Brand
    Vishay / Siliconix
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    MOSFETs
    Pd - Power Dissipation
    52 W
    Typical Turn-Off Delay Time
    11 ns