IGBT Intelligent Power Modules ROHM Semiconductor IGBT Intelligent Power Modules (IPMs) Insulated-Gate Bipolar Transistors (IGBT) optimized for both high-speed and low-speed switching drives. These IPMs are comprised of gate drivers, bootstrap diodes, IGBTs, and flywheel diodes. The modules offer a collector current ranging from 3A to 80A and voltage ranging from 600V to 1800V. The ROHM Semiconductor IGBT IPMs feature 3-phase DC/AC inverter, low side IGBT open-emitter, high side IGBT gate driver, low side IGBT gate driver, and fault signal. Typical applications include low-speed and high-speed switching drives.