10 pcs - IKW50N65ES5XKSA1 IGBT 650V 50A TRENCHSTOP 10-40kHz TO-247

Infineon TrenchStop IGBT Transistors, 600 and 650VA range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.• Collector-emitter voltage range 600 to 650V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• Maximum junction temperature 175°CIGBT Discretes & Modules, InfineonThe Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.