The Infineon 600 V, 15 A IGBTs transistor has maximum continous collector current is 26 A.The maximum junction temperature is 175°C. It has highest efficiency,low conduction and switching losses,comprehensive portfolio in 600 V and 1200 V for flexibility of design and high device reliability.Very soft, fast recovery anti-parallel emitter controlled diodeHigh ruggedness, temperature stable behaviorLow EMI emissionsLow gate chargeVery tight parameter distribution