1 pcs : GT20N135SRA,S1E - IGBT Transistors DISCRET IGBT TRANSTR Vces1350V Ic40A
    • 1 pcs : GT20N135SRA,S1E - IGBT Transistors DISCRET IGBT TRANSTR Vces1350V Ic40A

    1 pcs : GT20N135SRA,S1E - IGBT Transistors DISCRET IGBT TRANSTR Vces1350V Ic40A

    electronicparts-UK/M/757-GT20N135SRA,S1E
    TOSHIBA
    £11.67
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    GT20N135SRA Silicon N-Channel IGBT Toshiba GT20N135SRA Silicon N-Channel IGBT is a 6.5th generation IGBT and consists of a Freewheeling Diode (FWD) monolithically integrated into an IGBT chip. This IGBT features a low saturation voltage of 1.60V and operates at a maximum of 175°C high junction temperature and 0.25µs of high-speed switching. The GT20N135SRA Silicon N-Channel IGBT is ideal for voltage-resonant inverter switching, soft switching, and induction cooktops and home appliance applications.
    Product Details
    TOSHIBA
    electronicparts-UK/M/757-GT20N135SRA,S1E
    GT20N135SRA,S1E
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    IGBT Transistors
    Configuration
    Single
    Package/Case
    TO-247-3
    Product Category
    IGBT Transistors
    Packaging
    Tube
    RoHS
    Details
    Brand
    Toshiba
    Factory Pack Quantity Factory Pack Quantity
    30
    Subcategory
    IGBTs
    Unit Weight
    6.150 mg
    Pd - Power Dissipation
    312 W