1 pcs : STGW8M120DF3 - IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
    • 1 pcs : STGW8M120DF3 - IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

    1 pcs : STGW8M120DF3 - IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

    electronicparts-UK/M/511-STGW8M120DF3
    £10.74
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    STM 650V M Series Trench Gate Field-Stop IGBTs STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
    Product Details
    electronicparts-UK/M/511-STGW8M120DF3
    STGW8M120DF3
    10 Items

    Data sheet

    Manufacturer
    STMicroelectronics
    Series
    M
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    IGBT Transistors
    Configuration
    Single
    Package/Case
    TO-247-3
    Product Category
    IGBT Transistors
    Packaging
    Tube
    RoHS
    Details
    Brand
    STMicroelectronics
    Factory Pack Quantity Factory Pack Quantity
    600
    Subcategory
    IGBTs
    Unit Weight
    6 g
    Pd - Power Dissipation
    167 W