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    1 pcs : RGW80TS65DHRC11 - IGBT Transistors High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IG
    • 1 pcs : RGW80TS65DHRC11 - IGBT Transistors High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IG

    1 pcs : RGW80TS65DHRC11 - IGBT Transistors High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IG

    electronicparts-UK/M/755-RGW80TS65DHRC11
    £18.24
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    RGW 650V Field Stop Trench IGBTs ROHM Semiconductor RGW 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGW IGBTs feature high-speed switching, low switching loss, and built-in very fast and soft recovery FRD. The ROHM RGW 650V Field Stop Trench IGBTs are ideal for solar inverter, UPS, welding, IH, and PFC applications.
    Product Details
    ROHM SEMICONDUCTOR
    electronicparts-UK/M/755-RGW80TS65DHRC11
    RGW80TS65DHRC11
    10 Items

    Data sheet

    Manufacturer
    ROHM SEMICONDUCTOR
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    Through Hole
    Product Type
    IGBT Transistors
    Configuration
    Single
    Package/Case
    TO-247N-3
    Product Category
    IGBT Transistors
    Packaging
    Tube
    RoHS
    Details
    Brand
    ROHM Semiconductor
    Factory Pack Quantity Factory Pack Quantity
    30
    Subcategory
    IGBTs
    Part # Aliases
    RGW80TS65DHR
    Pd - Power Dissipation
    214 W