1 pcs : STGW40H120F2 - IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
    • 1 pcs : STGW40H120F2 - IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

    1 pcs : STGW40H120F2 - IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

    electronicparts-UK/M/511-STGW40H120F2
    £16.61
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Latest Technologies in Power MOSFET and IGBT STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.
    Product Details
    electronicparts-UK/M/511-STGW40H120F2
    STGW40H120F2
    10 Items

    Data sheet

    Manufacturer
    STMicroelectronics
    Series
    STGW40H120F2
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    IGBT Transistors
    Configuration
    Single
    Package/Case
    TO-247-3
    Product Category
    IGBT Transistors
    Packaging
    Tube
    RoHS
    Details
    Brand
    STMicroelectronics
    Factory Pack Quantity Factory Pack Quantity
    600
    Subcategory
    IGBTs
    Unit Weight
    38 g
    Pd - Power Dissipation
    468 W