1 pcs : NXH450B100H4Q2F2PG - IGBT Modules 1000V,75A FSIII IGBT, MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS

      electronicparts-UK/M/863-H450B100H4Q2F2PG
      ONSEMI
      £411.60
      Delivery: 4-7 business days
      Quantity
      10 Items

      Description
      NXH450B100H4Q2 Si/SiC Hybrid Modules onsemi NXH450B100H4Q2 Si/SiC Hybrid Modules contain two 1000V, 150A IGBTs, two 1200V, 30A SiC diodes and two 1600V 30A bypass diodes, and an NTC thermistor. These Si/SiC hybrid modules feature low switching loss, reduced system power dissipation, a low inductive layout, and press-fit and solder pin options. The NXH450B100H4Q2 hybrid modules offer a storage temperature range of -40°C to 125°C and an operating temperature range of -40°C to 125°C under switching conditions. These Si/SiC hybrid modules are ideally used in solar inverters and uninterruptible power supplies.
      Product Details
      ONSEMI
      electronicparts-UK/M/863-H450B100H4Q2F2PG
      NXH450B100H4Q2F2PG
      10 Items

      Data sheet

      Manufacturer
      ONSEMI
      Series
      NXH450B100H4Q2
      Maximum Operating Temperature
      + 150 C
      Minimum Operating Temperature
      - 40 C
      Product Type
      IGBT Modules
      Configuration
      Dual
      Product Category
      IGBT Modules
      Packaging
      Tray
      RoHS
      Details
      Brand
      onsemi
      Product
      IGBT Silicon Carbide Modules
      Factory Pack Quantity Factory Pack Quantity
      36
      Subcategory
      IGBTs
      Pd - Power Dissipation
      234 W